SILICON CARBIDE PERFORMANCE
FOR THE PRICE OF SILICON

ADVANTAGES OF CUBIC
SiC for LEDs

USING ANVIL SEMICONDUCTORS’ 3C-SIC ON SILICON AS A SUBSTRATE FOR LEDS HAS THE POTENTIAL TO DELIVER

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REDUCED COST

  • Enables use of Silicon substrates
  • Overcomes the lattice and thermal expansion mismatches between GaN and silicon
  • Allows use of larger wafers

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HIGH EFFICIENCY

  • Reduced dislocation density reduces recombination and increases efficiency
  • Cubic GaN reduces or eliminates internal fields so increasing efficiency

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HIGH INTENSITY LIGHT

  • Cubic GaN increases efficiency and reduces droop – reduction in efficiency with higher current- so enabling high intensity LEDs

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WARM WHITE LIGHT

  • Cubic GaN overcomes the “green gap” – significantly lower efficiency in the green wavelength.
  • Enables warm white light by colour mixing of efficient RGB LEDs

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INCREASED EFFICIENCY FOR LCDS AND DISPLAYS

  • High efficiency across the full visible spectrum enables use in displays
  • Cubic GaN enables production of polarised light for use in LCDs negating need for polariser with high losses

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LONGER LIFE

  • Reduced internal fields reduces failure modes
  • Higher efficiency reduces heat dissipation problems that cause system failures