SILICON CARBIDE PERFORMANCE
FOR THE PRICE OF SILICON
Anvil has unique technology that enables the growth of device quality 3C-SiC epitaxy on 100mm silicon wafers to thicknesses that permit the fabrication of vertical power devices. The proprietary process overcomes mismatches in lattice parameter and thermal coefficient of expansion and can be readily migrated onto 150mm wafers and potentially beyond.
The Anvil material has applications ranging from power devices and LEDs to medical devices and MEMS. It can be used to fabricate SiC devices or as a means to enable the growth of other compound semiconductor structures onto silicon.
Our plan is to supply qualified devices to customers as well as licensing our 3C-SiC material.
The Company has offices in Coventry and Cambridge and is backed by Business Angels and early stage VCs.
Anvil has a small experienced team and an extensive network of Industrial and Academic partners.