ADVANTAGES OF SILICON CARBIDE
IN POWER ELECTRONICS

SILICON CARBIDE DEVICES ENABLE:

silicon-carbide-higher-voltages

HIGHER VOLTAGES

SiC can sustain much higher voltages (almost 10 times) compared to silicon.

  • Devices can be shrunk in size reducing the resistive losses
  • Fewer SiC switches in series are required in high voltage applications
  • Reduces system complexity and cost whilst improving reliability

silicon-carbide-higher-currents

HIGHER CURRENTS

SiC can carry much higher currents (almost 5 times) compared to silicon.

  • Reduces the area of devices
  • Reduces the parasitic capacitance

silicon-carbide-higher-temps

HIGHER TEMPERATURES

SIC can operate up to 400°C compared to 150°C for silicon.

  • Reduces cooling costs and complexity

silicon carbide higher thermal conductivity

HIGHER THERMAL CONDUCTIVITY

SiC has a much higher thermal conductivity (roughly 3 times) compared to silicon.

  • Heat is conducted away much more effectively
  • Greatly reduces complexity of cooling systems
  • Significant reduction in cost and size

silicon-carbide-switches-faster

FASTER SWITCHING

Power devices made from SiC can switch roughly 10 times faster than those made from silicon.

  • Power conversion circuits operate faster
  • Much smaller energy storage capacitors and inductors
  • Smaller, cheaper and more efficient system

silicon-carbide-higher-energy

HIGHER ENERGY BAND GAP

SiC has a higher energy band gap than silicon.

  • More robust (hardened) against disturbances such as heat, radiation or intense electromagnetic fields
  • Very useful in sensor and military applications