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Developers of 3C-SiC/Si

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ANVIL IN THE NEWS

  • SiC hybrid power module lowers power conversion costs
  • In the news – Plessey, Anvil Semiconductors and the University of Cambridge to use Anvil’s 3C-SiC / Si substrates.
  • Meeting the need for low cost MOSFETs

PRESS RELEASES

  • Anvil Semiconductor works with the Manufacturing Technology Centre to develop a low cost silicon carbide hybrid power module using 3C-SiC devices
  • Plessey to build LEDs in cubic GaN on Anvil Semiconductors’ 3C-SiC/Si substrates to overcome Green Gap
  • Growth of cubic gallium nitride on silicon wafers by MOCVD offers promise of lower cost, more efficient LEDs

NEWS ARCHIVES

  • February 2016
  • January 2016
  • June 2015
  • May 2015
  • March 2015
  • December 2014
  • September 2014
  • May 2014
  • February 2014
  • January 2014
  • October 2013

Anvil involved in £9.5m UK project to develop SiC-based technology to modernize grid

May 11, 2015ANVIL IN THE NEWSJill Shaw

Anvil involved in £9.5m UK project to develop SiC-based technology to modernize grid

http://www.semiconductor-today.com/news_items/2015/may/anvil_080515.shtml

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← News Article Meeting the need for low cost MOSFETs →

NEWS

  • SiC hybrid power module lowers power conversion costs February 15, 2016
  • Anvil Semiconductor works with the Manufacturing Technology Centre to develop a low cost silicon carbide hybrid power module using 3C-SiC devices February 15, 2016

CONTACT US

If you are interested in finding out more about the devices Anvil are developing, in receiving early development samples, or if you are interested in using 3C-SiC devices or material please get in touch.

Email: info@anvil-semi.co.uk, Tel: 01223 655444.

©2014 Anvil Semiconductors