November 22 2013
Anvil Semiconductor wins NMI’s 2013 Innovation in Power Electronics Award
Anvil Semiconductor has won the coveted Innovation in Power Electronics category at the 2013 NMI Electronic Systems Awards ceremony.
The Judges cited Anvil’s development of a unique and highly innovative technology to enable the production of high performance silicon carbide power switches at a similar cost to conventional silicon by growing the silicon carbide on silicon wafers.
The category is awarded to the company that can best demonstrate a significant business impact through innovation in power electronics. This can cover multiple aspects including automotive, industrial, aerospace, or energy. Judges consider innovation to cover a technical development or breakthrough that has recently had or is at the point of making market impact.
The category is sponsored by Alstom and was presented by the company’s commercial director David Hanson.
The full list of winners is:
The awards promote practices conducive to the long-term health of the UK’s electronic systems community. 2013 is the Awards’ 12th outing, with this year’s event being held on the 21st November at the exclusive Millennium Hotel in Mayfair, London.
Over 400 guests from throughout the UK and around the world attended the sell-out event. The celebrity speaker was the automotive journalist and former Top Gear presenter, Quentin Willson.
Anvil closes on £1m funding round to commercialise low cost Silicon Carbide power devices
Anvil Semiconductors has secured backing to develop and commercialise its silicon carbide (SiC)-on-silicon technology for power devices. The unique epitaxial technology opens up the prospect of devices offering silicon carbide performance at the cost of silicon.
The superior operating efficiencies of SiC-based devices, versus those based on conventional silicon, have long made it a material of promise to the industry. However, the high costs of producing devices in SiC has discouraged their widespread adoption, particularly in cost-competitive consumer applications. Use of SiC devices has been largely restricted to niche markets where system benefits justify the cost premium.
Anvil Semiconductors, led by one of its founders Dr Peter Ward, has developed some unique technology for the production of epitaxial 3C-SiC layers on silicon substrates that promises a step reduction in the cost of manufacturing power switches in this material, aiming to open up high volume SiC device markets. Anvil’s objective is to enable production of SiC materials and devices at costs close to those for conventional silicon.
The company has now secured a £1M investment from a number of investors to allow it to accelerate the development and commercialisation of the technology. The funding round was led by the part-EU funded Low Carbon Innovation Fund (LCIF), and included Ntensive angel investor group, Cambridge Capital Group, several individual angel investors, existing investors Midven and Minerva Business Angels.
Jill Shaw, the CEO of Anvil Semiconductors commented:
Noel Forrest of LCIF commented: