Anvil Semiconductors transfers its 3C-SiC on silicon wafer production to Norstel

Anvil Semiconductors announces that it has secured a production source for its proprietary 3C-SiC on silicon epiwafers with commercial SiC wafer and epitaxy supplier Norstel AB.

Anvil’s novel process for the growth of device quality 3C-SiC epilayers on silicon wafers has been successfully transferred onto production reactors at Norstel’s state-of-the-art facilities in Norrkoping, Sweden. Layers grown using Anvil’s patented stress control techniques permit both 650V and 1200V devices to be realised.

Anvil is currently developing vertical SBDs and MOSFETs on its 3C-SiC on silicon wafers for supply and license to the multi-billion dollar power electronics market.  The use of silicon substrates and epitaxial growth of cubic silicon carbide enables fabrication of devices with the performance and efficiency benefits of SiC but at significantly lower material and manufacturing costs, a key target for the power electronics industry.

Jill Shaw, CEO of Anvil Semiconductors commented: “I’m delighted with this development. Getting the process onto production equipment at Norstel underlines the capabilities of our technology. It opens the way for the use of multi-wafer reactors for our future production needs and a move to 150mm diameter wafers.”

Ronald Vogel, CCO of Norstel AB added: “We are delighted that our proven high quality production expertise and capabilities in SiC epitaxy have helped Anvil to demonstrate the viability of their 3C-SiC solution and that Norstel’s manufacturing capacity will pave the way for Anvil’s volume production”.

About Anvil Semiconductors

Anvil Semiconductors which is backed by Business Angels and early stage VCs was established in August 2010 to develop silicon carbide power devices for the power electronics industry.

Anvil has unique technology that enables the growth of device quality 3C-SiC epitaxy on 100mm diameter silicon wafers to thicknesses that permit the fabrication of vertical power devices. The proprietary process overcomes mismatches in lattice parameter and thermal coefficient of expansion and can be readily migrated onto 150mm wafers and potentially beyond.  The Anvil material has applications ranging from power devices and LEDs to medical devices and MEMS. It can be used to fabricate high performance SiC devices with significant reductions in manufacturing costs, or as a means to enable the growth of other compound semiconductor structures onto silicon

Power electronics and switches are used to switch and control power from AC line to DC conversion for applications as diverse as laptop computers or other consumer products to railway electric traction and the grid. In the modern world it is ubiquitous and plays a key role in improving the efficiency in energy utilisation of everyday products.

The Company has offices in Coventry and Cambridge and has a small experienced team and an extensive network of Industrial and Academic partners

For more information see www.anvil-semi.co.uk

About Norstel

Norstel AB is a manufacturer of conductive and semi-insulating silicon carbide wafers and single-crystal epitaxial layers deposited by CVD epitaxy.

Norstel stands for excellence in Silicon Carbide (SiC). The company has a long history in developing SiC process technology and SiC products with outstanding capabilities and quality. Norstel offers state-of-the-art n-type and semi-insulating SiC substrates and related services for wafer epitaxy, characterization and polishing for high performance semiconductors used in Power and HF Electronics.

Applications amongst others include power electronic components used in hybrid cars, industrial equipment, power conversion and transmission, mobile phone base stations and radar systems where energy can be saved and performance improved by SiC devices and related systems solutions.

For more information visit www.norstel.com or contact ronald.vogel@norstel.com

 

Anvil Semiconductors awarded TSB grant to grow high quality GaN on 3C-SiC on large diameter silicon substrates

Anvil Semiconductors, the 3C-SiC on silicon power device developer, has been awarded a grant by the UK’s Technology Strategy Board (TSB) to evaluate the feasibility of using its unique stress relief technology to enable the production of low cost, high brightness LEDs on large diameter silicon substrates.

Fabricating GaN-based LEDs on large diameter silicon wafers is recognised as a key path to reducing the cost of lighting systems and displays.  However, existing techniques used to manage the large mismatches in lattice parameter and thermal coefficient of expansion between silicon and GaN are complex and costly and to date have struggled to deliver materials suitable for high efficiency devices.    However, with the growth of GaN-based LED structures on SiC already well-established, high quality 3C-SiC on silicon produced using Anvil’s proprietary stress relief technology could provide an attractive alternative solution which can be readily migrated onto 150mm diameter substrates and beyond.

The grant will fund work to produce and characterise typical GaN-based epilayers on Anvil’s 3C-SiC on silicon wafers.  With Anvil’s process able to produce high quality 3C-SiC surfaces with orientation close to (100), the project will also explore the technology’s potential for producing the elusive cubic and importantly non-polar form of GaN.  If successful this could be highly beneficial and pave the way for further device benefits including improved LED efficiencies and lower power consumption displays.

Jill Shaw, CEO of Anvil Semiconductors commented: “We’re delighted to have been given this opportunity to explore the potential for Anvil’s technology in another exciting market.  If we’re successful we will be looking for partners to help us take it forward”.

About Anvil Semiconductors

Anvil Semiconductors which is backed by Business Angels and early stage VCs was established in August 2010 to develop unique silicon carbide power devices for the power electronics industry.

Power electronics and switches are used to switch and control power from AC line to DC conversion for applications as diverse as laptop computers or other consumer products to railway electric traction and the grid. In the modern world it is ubiquitous and plays a key role in improving the efficiency in energy utilisation of everyday products.

Anvil’s alternative approach to SiC switches offers significant improvements in efficiency whilst costing no more than their silicon competitors.  This approach involves growing a thin layer of 3 step cubic SiC (3C-SiC) on silicon substrates sufficient to build the active power devices.  In addition to the fundamental crystal growth expertise, Anvil has intellectual property (IP) relating to resolving the problem of the stress which is inevitable when growing SiC on silicon and which to date has prevented the widespread adoption of this technology.  The Anvil IP has been proven on 100mm diameter silicon wafers and can be readily migrated onto larger wafer diameters without modification.  More information on Anvil Semiconductors and its technology can be found at  www.anvil-semi.co.uk

Anvil Semiconductors appoints Chairman to lead the commercialisation of 3C-SiC technology for power devices

Following its recent $1.6M investment round, Anvil Semiconductors Ltd today announced the appointment of Martin Lamb as Chairman to lead the company as it commercialises its new technology that promises to open up high volume power device markets for silicon carbide (SiC). The unique SiC-on-silicon epitaxial technology opens up the prospect of devices offering SiC performance at the costs close to those of silicon.

Continue reading

Anvil Semiconductor wins NMI’s 2013 Innovation in Power Electronics Award

nmi

Anvil Semiconductor has won the coveted Innovation in Power Electronics category at the 2013 NMI Electronic Systems Awards ceremony.

The Judges cited Anvil’s development of a unique and highly innovative technology to enable the production of high performance silicon carbide power switches at a similar cost to conventional silicon by growing the silicon carbide on silicon wafers.

Continue reading